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  Datasheet File OCR Text:
 CMPT2907A
PNP SILICON TRANSISTOR
Central
DESCRIPTION:
TM
Semiconductor Corp.
SOT-23 CASE MAXIMUM RATINGS (TA=25oC) SYMBOL VCBO VCEO VEBO IC PD TJ,Tstg JA
The CENTRAL SEMICONDUCTOR CMPT2907A type is an PNP silicon transistor manufactured by the epitaxial planar process, epoxy molded in a surface mount package, designed for small signal general purpose and switching applications. Marking Code is C2F.
Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current Power Dissipation Operating and Storage Junction Temperature Thermal Resistance
60 60 5.0 600 350 -65 to +150 357
UNITS V V V mA mW
oC oC/W
ELECTRICAL CHARACTERISTICS (TA=25oC unless otherwise noted) SYMBOL ICBO ICBO ICEV BVCBO BVCEO BVEBO VCE(SAT) VCE(SAT) VBE(SAT) VBE(SAT) hFE hFE hFE hFE TEST CONDITIONS VCB=50V VCB=50V, TA=125oC VCE=30V, VBE=0.5V IC=10A IC=10mA IE=10A IC=150mA, IB=15mA IC=500mA, IB=50mA IC=150mA, IB=15mA IC=500mA, IB=50mA VCE=10V, IC=0.1mA VCE=10V, IC=1.0mA VCE=10V, IC=10mA VCE=10V, IC=150mA MIN MAX 10 10 50 UNITS nA A nA V V V V V V V
60 60 5.0 0.4 1.6 1.3 2.6 75 100 100 100
300
164
SYMBOL hFE fT Cob Cib ton td tr toff ts tf
TEST CONDITIONS VCE=10V, IC=500mA VCE=20V, IC=50mA, f=100MHz VCB=10V, IE=0, f=1.0MHz VBE=2.0V, IC=0, f=1.0MHz VCC=30V, VBE=0.5, IC=150mA, IB1=15mA VCC=30V, VBE=0.5, IC=150mA, IB1=15mA VCC=30V, VBE=0.5, IC=150mA, IB1=15mA VCC=6.0V, IC=150mA, IB1=IB2=15mA VCC=6.0V, IC=150mA, IB1=IB2=15mA VCC=6.0V, IC=150mA, IB1=IB2=15mA
MIN 50 200
MAX
UNITS MHz pF pF ns ns ns ns ns ns
8.0 30 45 10 40 100 80 30
All dimensions in inches (mm).
LEAD CODE: 1) BASE 2) EMITTER 3) COLLECTOR
R2
165


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